日本大学生産工学部　生産工学部研究報告A51-2

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─ 11 ─ever, on the sidewall, H/H2 atoms/molecules hardly etch the substrate since it can be generally considered that injected particles lose their kinetic energy near the sidewall and almost H atoms are adsorbed by N atoms. Therefore, anisotropic etching is proceeding on the PPP surface by nitrogen-hydro-gen ion beam irradiation.At the present study, we have numerically conrmed that the CN layer formation process for hydrogenated-nitrogen ion bombardment and that the CN layer formed on the PPP sur-face play a role of precursor of the etching for more N atoms injection simultaneously of protector for H and H2 injections. Although we have obtained some characteristic features of surface reactions on the organic polymer etching, as an future task, more realistic organic polymer substrate including, for exampl, oxygen or phosphorus, will have to be prepared.Additionally, the analysis of the CN layer seems to be im-portant not only in organic polymer lm etching but also in other elds, for example, a surface modication treatment method such as active screen plasma nitriding25, 26).AcknowledgmentsThe auther would like to thank Dr. S. Hamaguchi for fruit-ful discussions, guidance and encoragement for years. The au-ther is also grateful to Dr. H. Yamada, Dr. K. Karahashi, Dr. T. Ito and Dr. M. Isobe for helpful and stimulating discussions, and for decent supports in various things.References1)Puliyalil, H. and Cvelbar, U. : Selective Plasma Etching of Polymeric Substrates for Advanced Applications. Nanomaterials, 6 (2016), 108.2)Hamaguchi, S. : Modeling and Simulation Methods for Plasma Processing. IBM J. Res. Dev. 43 (1999), 199.3)Kanarik, K. J., Lill, T., Hudson, E. A., Sriraman., S. Tan, S., Marks, J., Vahedi, V. and Gottscho, R. A. : Overview of Atomic Layer Etching in the Semiconductor Industory. J. Vac. Sci. Technol., A 33 (2015), 020802.4)Abe, H., Yoneda, M. and Fujiwara, N. : Developments of Plasma Etching Technology for Fabricating Semiconduc-tor Devices. Jpn. J. Appl. Phys., 47 (2008), 1435.5)Baklanov, M. R., Vanhaelemeersch, S., Bender, H. and Maex, K. : Eects of Oxygen and Fluorine on the Dry Etch Characteristics of Organic low-k Dielectrics. J. Vac. Sci. Technol., B 17 (1999), 372.6)Fukunaga, Y., Tsutsumi, T., Takeda, K., Kondo, H., Ishi-kawa, K., Sekine, M. and Hori, M. : Temperature Depen-dence of Protection Layer Fromation on Organic Trench sidewall in H2/N2 Plasma Etching with Control of Sub-strate Temperature. Jpn. J. Appl. Phys., 56 (2017), 076202.7)Nagai, H., Takashima, S., Hiramatsu, M., Hori, M.and Goto, T. : Behavior of Atomic Radicals and Their Eects on Organic Low Dielectric Constant Film Etching in High Density N2/H2 and N2/NH3 Plasmas. J. App. Phys., 91 (2002), 2615.8)Nagai, H., Hiramatsu, M., Hori, M. and Goto, T. : Plasma Induced Subsurface Reactions for Anisotropic Etching of Organic Low Dielectric Film Employing N2 and H2 Gas Chemistry. Jpn. J. Appl. Phys., 42 (2003), L212.9)Nagai, H., Hiramatsu, M., Hori, M. and Goto, T. : Etch-ing Organic Low Dielectric Film in Ultrahigh Frequency Plasma Using N2/H2 and N2/NH3 Gases. J. Appl. Phys., 94 (2003), 1362.10)Morikawa, Y., Hayashi, T. and Uchida, T. : Etching Char-acteristics of Organic Polymers in the Magnetic Neutral Loop Discharge Plasma. Jpn. J. Appl. Phys., 42 (2003), 1441.11)Morikawa, Y., Yasunami, S., Hayashi, T. and Uchida, T. : Low-k Materials Etching in Magnetic Neutral Loop Dis-charge Plasma. J. Vac. Sci. Technol., A 19 (2001), 1747.12)Kurihara, K., Egami, A. and Nakamura, M. : Study of Organic Polymer Thin-Film Etching by Plasma Beam Ir-radiation. J. Appl. Phys., 98 (2005), 084907.13)Kurihara, K., Karahashi, K., Egami, A. and Nakamura, M. : Measurement of Desorbed Products During Organic Polymer Thin Film Etching by Plasma Beam Irradiation. J. Vac. Sci. Technol., A 24 (2006), 2217.14)Ishikawa, K., Yamaoka, Y., Nakamura, M., Yamazaki, Y., Yamasaki, S., Ishikawa, Y. and Samukawa, S. : Surface Reactions During Etching of Organic Low-k Films by Plasmas of N2 and H2. J. Appl. Phys., 99 (2006), 083305.15)Yamada, H. and Hamaguchi, S. : Molecular- Dynamics Simulations of Organic Polymer Etching by Hydrocarbon Beams. J. Appl. Phys., 96 (2004), 6147.16)Yamashiro, M., Yamada, H. and Hamaguchi, S. : Molec-ular Dynamics Simulation Study on Substrate Tempera-ture Dependence of Sputtering Yields for an Organic Polymer Under Ion Bombardment. J. Appl. Phys., 101 (2007), 046108.17)Yamashiro, M., Yamada, H. and Hamaguchi, S. : Molec-ular Dynamics Simulations of Organic Polymer Dry Etching at High Substrate Temperatures. Jpn. J. Appl. Phys., 46 (2007), 1692.18)Brenner, D. W. : Empirical Potential for Hydrocarbons